| Quantity in stock: 87 |
BYW29-200, TO-220, 8A, 8A, TO-220AC, 200V
Quantity
Unit price
1-4
1.65$
5-24
1.45$
25-49
1.29$
50-99
1.15$
100+
0.97$
| Equivalence available | |
| Quantity in stock: 161 |
BYW29-200, TO-220, 8A, 8A, TO-220AC, 200V. Housing: TO-220. Forward current (AV): 8A. Average Rectified Current per Diode: 8A. Housing (according to data sheet): TO-220AC. VRRM: 200V. Assembly/installation: PCB through-hole mounting. Cj: 45pF. Conditioning: tubus. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 8A. Forward voltage Vf (min): 0.85V. Function: SWITCHMODE Power Rectifiers. Heatsink Thickness: 1.14...1.39mm. Information: -. MRI (max): 600uA. MRI (min): 5uA. MSL: -. Max reverse voltage: 200V. Mounting Type: THT. Number of terminals: 2. Operating temperature: -65...+175°C. Reverse Recovery Time (Max): 25ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: Ifsm 100A (t=8.3ms). Threshold voltage Vf (max): 1.3V. Trr Diode (Min.): 25 ns. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 13/11/2025, 22:04
BYW29-200
29 parameters
Housing
TO-220
Forward current (AV)
8A
Average Rectified Current per Diode
8A
Housing (according to data sheet)
TO-220AC
VRRM
200V
Assembly/installation
PCB through-hole mounting
Cj
45pF
Conditioning
tubus
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
8A
Forward voltage Vf (min)
0.85V
Function
SWITCHMODE Power Rectifiers
Heatsink Thickness
1.14...1.39mm
MRI (max)
600uA
MRI (min)
5uA
Max reverse voltage
200V
Mounting Type
THT
Number of terminals
2
Operating temperature
-65...+175°C
Reverse Recovery Time (Max)
25ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
Ifsm 100A (t=8.3ms)
Threshold voltage Vf (max)
1.3V
Trr Diode (Min.)
25 ns
Original product from manufacturer
ON Semiconductor