Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.41$ | 0.44$ |
10 - 24 | 0.39$ | 0.42$ |
25 - 49 | 0.37$ | 0.40$ |
50 - 99 | 0.35$ | 0.38$ |
100 - 249 | 0.33$ | 0.36$ |
250 - 499 | 0.29$ | 0.31$ |
500 - 863 | 0.27$ | 0.29$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.41$ | 0.44$ |
10 - 24 | 0.39$ | 0.42$ |
25 - 49 | 0.37$ | 0.40$ |
50 - 99 | 0.35$ | 0.38$ |
100 - 249 | 0.33$ | 0.36$ |
250 - 499 | 0.29$ | 0.31$ |
500 - 863 | 0.27$ | 0.29$ |
DB107S. VRRM: 1000V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 7.4x6.2x3.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity in stock updated on 27/04/2025, 08:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.