Electronic components and equipment, for businesses and individuals

S1WBS60

S1WBS60
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.87$ 3.10$
5 - 9 2.72$ 2.94$
10 - 24 2.58$ 2.79$
25 - 34 2.44$ 2.64$
Quantity U.P
1 - 4 2.87$ 3.10$
5 - 9 2.72$ 2.94$
10 - 24 2.58$ 2.79$
25 - 34 2.44$ 2.64$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 34
Set of 1

S1WBS60. VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Quantity per case: 4. Number of terminals: 4. Quantity in stock updated on 27/04/2025, 08:25.

Equivalent products :

Quantity in stock : 520
B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap
Set of 1
0.46$ VAT incl.
(0.43$ excl. VAT)
0.46$
Quantity in stock : 172
DB106

DB106

VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor ma...
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4
Set of 1
0.42$ VAT incl.
(0.39$ excl. VAT)
0.42$

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TNY280PN

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COILM10-AX275

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DB107S

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Quantity in stock : 73
DB102G

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VRRM: 100V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode br...
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Quantity in stock : 520
B1000D

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VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
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B1000S1500

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S1WB80B

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1N4004

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S1WB60B

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VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
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