Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.39$ | 0.42$ |
10 - 24 | 0.37$ | 0.40$ |
25 - 49 | 0.35$ | 0.38$ |
50 - 99 | 0.33$ | 0.36$ |
100 - 172 | 0.30$ | 0.32$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.39$ | 0.42$ |
10 - 24 | 0.37$ | 0.40$ |
25 - 49 | 0.35$ | 0.38$ |
50 - 99 | 0.33$ | 0.36$ |
100 - 172 | 0.30$ | 0.32$ |
DB106. VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4. Quantity in stock updated on 27/04/2025, 08:25.
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