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Semiconductors Diodes Standard and Rectifier Diodes

DSEI2X101-06A

DSEI2X101-06A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 48.53$ 52.46$
2 - 2 46.11$ 49.84$
3 - 4 43.68$ 47.22$
5 - 9 41.25$ 44.59$
10 - 14 40.28$ 43.54$
15 - 18 39.31$ 42.49$
Quantity U.P
1 - 1 48.53$ 52.46$
2 - 2 46.11$ 49.84$
3 - 4 43.68$ 47.22$
5 - 9 41.25$ 44.59$
10 - 14 40.28$ 43.54$
15 - 18 39.31$ 42.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

DSEI2X101-06A. Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Quantity in stock updated on 27/04/2025, 09:25.

Technical documentation

Equivalent products :

Out of stock
DSEI2X101-12A

DSEI2X101-12A

Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data she...
DSEI2X101-12A
Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C
DSEI2X101-12A
Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C
Set of 1
91.77$ VAT incl.
(84.89$ excl. VAT)
91.77$

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Quantity in stock : 18
DSEI2X101-06A

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Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sh...
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DSEI30-12A

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70HFR80

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