Quantity (Set of 5) | excl. VAT | VAT incl. |
---|---|---|
1 - 2 | 1.29$ | 1.39$ |
3 - 4 | 1.23$ | 1.33$ |
5 - 9 | 1.16$ | 1.25$ |
10 - 19 | 1.10$ | 1.19$ |
20 - 49 | 1.03$ | 1.11$ |
50 - 99 | 0.88$ | 0.95$ |
100 - 119 | 0.82$ | 0.89$ |
Quantity (Set of 5) | U.P | |
---|---|---|
1 - 2 | 1.29$ | 1.39$ |
3 - 4 | 1.23$ | 1.33$ |
5 - 9 | 1.16$ | 1.25$ |
10 - 19 | 1.10$ | 1.19$ |
20 - 49 | 1.03$ | 1.11$ |
50 - 99 | 0.88$ | 0.95$ |
100 - 119 | 0.82$ | 0.89$ |
MB10S. VRRM: 1000V. Forward current (AV): 0.8A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: MB10F. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.9x2.5mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: maximum thickness 2.7mm. Quantity in stock updated on 27/04/2025, 17:25.
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