N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-220, 600V, 12A, 1, TO-220, 600V. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 12A. Housing (JEDEC standard): 1. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP12N60C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.65 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 70 ns. Switch-off delay tf[nsec.]: 280 ns. Ciss Gate Capacitance [pF]: 2290pF. Maximum dissipation Ptot [W]: 225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. G-S Protection: no. Id(imp): 51.2A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID (T=25°C): 12.5A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1800pF. Cost): 245pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Fast Switching Speed. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 195W. RoHS: yes. Spec info: Low gate charge (typical 43nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (T=25°C): 19A. Idss (max): 10uA. On-resistance Rds On: 0.078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 600pF. Cost): 165pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 78 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 76A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.5 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12.1A, 19A, 19A, 0.14 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 19A. On-resistance Rds On: 0.14 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switching, td(on)15ns, td(off)135ns. Id(imp): 76A. Pd (Power Dissipation, Max): 139W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor (DMOS, QFET)

N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1150pF. Cost): 320pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 127W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.02A, 3.2A, 10uA, 1.65 Ohms, TO-220, TO220, 300V. ID (T=100°C): 2.02A. ID (T=25°C): 3.2A. Idss (max): 10uA. On-resistance Rds On: 1.65 Ohms. Housing: TO-220. Housing (according to data sheet): TO220. Voltage Vds(max): 300V. C(in): 175pF. Cost): 40pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 12.8A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 55W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: QFET, Enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 30.8A, 43.5A, 10uA, 0.03 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 30.8A. ID (T=25°C): 43.5A. Idss (max): 10uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1400pF. Cost): 425pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 174A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 146W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 32.2A, 45.6A, 10uA, 0.033 Ohms, TO-220, TO-220, 150V. ID (T=100°C): 32.2A. ID (T=25°C): 45.6A. Idss (max): 10uA. On-resistance Rds On: 0.033 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 150V. C(in): 2500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 182A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 210W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220, 60V, 50A, 1, TO-220, 60V. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Housing (JEDEC standard): 1. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 1540pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220, 60V, 52.4A, 1, TO-220, 60V. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 52.4A. Housing (JEDEC standard): 1. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 26.2A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1630pF. Maximum dissipation Ptot [W]: 121W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Spec info: Logic-Level. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 20 ns. Technology: DMOS, QFET, LOGIC N-Ch. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1420pF. Cost): 150pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 300A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET

N-channel transistor, 6A, 9.5A, 9.5A, 0.36 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 6A. ID (T=25°C): 9.5A. Idss (max): 9.5A. On-resistance Rds On: 0.36 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 20nC, Low Crss 40.5pF. Id(imp): 38A. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET

N-channel transistor, 7A, 11A, 100uA, 0.48 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.48 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 1515pF. Cost): 185pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 43nC, Low Crss 20pF. G-S Protection: no. Id(imp): 44A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 24 ns. Technology: QFET ® FRFET ® MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 51W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7.5A, 11.8A, 10uA, 0.12 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 7.5A. ID (T=25°C): 11.8A. Idss (max): 10uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 1220pF. Cost): 220pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.1A, 19A, 100uA, 0.14 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. On-resistance Rds On: 0.14 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 830pF. Cost): 195pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 76A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 43W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 135 ns. Td(on): 15 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 11.1A, 15.7A, 10uA, 0.042 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Id(imp): 62.8A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 1.9A, 3A, 100uA, 4 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 543pF. Cost): 54pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 642 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 13nC, Low Crss 5.5pF. G-S Protection: no. Id(imp): 12A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 39W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 22.5 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 2.3A, 4A, 100uA, 3.5 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.3A. ID (T=25°C): 4A. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 740pF. Cost): 65pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Id(imp): 16A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 47W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 25 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V