N-channel FETs and MOSFETs

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 80A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SFD. Number of terminals: 3. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SF. Number of terminals: 3. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2915pF. Cost): 270pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SMD. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 42A, TO-264 ( TOP-3L ), TO-264-3L, 1000V. Ic(T=100°C): 42A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Collector/emitter voltage Vceo: 1000V. C(in): 6000pF. Cost): 260pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 1.2us. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Germanium diode: no. Collector current: 60A. Ic(pulse): 200A. Marking on the case: G60N100BNTD. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: NPT-Trench IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 630 ns. Td(on): 140 ns. Operating temperature: -55...+150°C. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 7V

N-channel transistor, 75A, TO-247, Power TO-247D03, 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): Power TO-247D03. Collector/emitter voltage Vceo: 600V. C(in): 3800pF. Cost): 390pF. CE diode: yes. Channel type: N. Germanium diode: no. Collector current: 150A. Ic(pulse): 225A. Marking on the case: FGY 75N60SMD. Number of terminals: 3. Pd (Power Dissipation, Max): 750W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 136 ns. Td(on): 24 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.14V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. CE diode: yes. Channel type: N. Function: ICRM--50A Tp=1mS, Tc=25°C. Germanium diode: no. Collector current: 39A. Ic(pulse): 50A. Note: 7x IGBT+ CE Diode. Number of terminals: 33dB. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Number of terminals: 3. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C_F109. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-3PN, 900V, 11.4A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA 11N90. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.96 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 340 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.43 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no. Id(imp): 60A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 218W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, 1, TO-3PN ( 2-16C1B ), TO-3PN, 800V. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Housing (JEDEC standard): 1. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 74A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.156 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 94A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. C(in): 1250pF. Cost): 260pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 40nC). G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 227W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 248A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C): 49.5A. ID (T=25°C): 70A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 100V. C(in): 2500pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 280A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Spec info: Low gate charge (typical 85nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 30 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

Assembly/installation: PCB through-hole mounting. C(in): 4150pF. Channel type: N. Conditioning: plastic tube. Cost): 840pF. Drain-source protection : diode. Function: Fast Switching. G-S Protection: NINCS. Gate/source voltage Vgs: 25V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. ID (T=100°C): 50A. ID (T=25°C): 70A. IDss (min): 1uA. Id(imp): 280A. Idss (max): 10uA. Number of terminals: 3 pieces. On-resistance Rds On: 0.023 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 330W. Process: DMOS Technology. ROHS: yes. Td(off): 340 ns. Td(on): 60 ns. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET.. Vgs(th) min.: 2V. Voltage Vds(max): 150V

N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: FQA9N90C. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, ITO-3P, 900V, 7.2A, 30, 0.91 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V. Housing: PCB soldering. Housing: ITO-3P. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 7.2A. Housing (JEDEC standard): 30. On-resistance Rds On: 0.91 Ohms. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQAF11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 3.6A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 670pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 62.4A. IDss (min): 1uA. Equivalents: FQD19N10LTM. Number of terminals: 2. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 15A, 24A, 10uA, 0.031 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.031 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 800pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Marking on the case: 30N06L. Number of terminals: 2. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V

N-channel transistor, 3.67A, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 220pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Low Gate Charge. G-S Protection: no. Id(imp): 5.8A. IDss (min): 1uA. Marking on the case: FQD7N10L. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V