N-channel FETs and MOSFETs

N-channel transistor, 1.51A, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 1.51A. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 9.6A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH Power MOSFET

N-channel transistor, 1.89A, 3A, 50uA, 3.6 Ohms, TO-220FP, TO-220FP, 900V. ID (T=100°C): 1.89A. ID (T=25°C): 3A. Idss (max): 50uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 900V. C(in): 590pF. Cost): 63pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Function: Zener-Protected. G-S Protection: yes. Id(imp): 12A. IDss (min): 1uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55°C to +150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 3V

N-channel transistor, 2.5A, 4A, 4A, 1.76 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 1.76 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. Id(imp): 16A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH

N-channel transistor, 37.5A, 62A, 0.01mA, 62A, 12.5m Ohms, TO-220, TO-220, 33V. ID (T=100°C): 37.5A. ID (T=25°C): 62A. Idss: 0.01mA. Idss (max): 62A. On-resistance Rds On: 12.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 33V. C(in): 1330pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: fully protected. G-S Protection: yes. Id(imp): 248A. Marking on the case: P62NS04Z. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 13 ns. Technology: MESH OVERLAY™ Power MOSFET. Gate/source voltage Vgs: 10V. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Marking on the case: P65NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 3.8A, 6A, 50uA, 1 Ohm, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 905pF. Cost): 115pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 445 ns. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Id(imp): 24A. IDss (min): 1uA. Marking on the case: P6NK60ZFP. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V

N-channel transistor, 4A, 6.5A, 6.5A, 1.5 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 6.5A. On-resistance Rds On: 1.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh

N-channel transistor, 3.3A, 5.2A, 1uA, 50uA, 1.5 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 1138pF. Cost): 122pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. G-S Protection: yes. Id(imp): 20.8A. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: Zener-Protected SuperMESH™Power MOSFET. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Operating temperature: -55...+150°C. Vgs(th) min.: 3.75V

N-channel transistor, 4.5A, 7.2A, 50uA, 0.72 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 28.8A. IDss (min): 1uA. Marking on the case: P9NK50ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

ROHS: Yes. Housing: IPAK. Assembly/installation: THT. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 600V. Drain current: 5A. On-state resistance: 550m Ohms. Gate-source voltage: ±25V. Power: 70W. Channel type: 'enhanced'

N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 50mA. On-resistance Rds On: 0.48 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Channel type: N. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 40A. IDss (min): 1mA. Marking on the case: W13NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 22 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. C(in): 2030pF. Cost): 210pF. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1

N-channel transistor, PCB soldering, TO-247, 500V, 17A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NK50Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 8.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NM50FD. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 1380pF. Maximum dissipation Ptot [W]: 214W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1450pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: W20NM60. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 28A, 45A, 100uA, 0.09 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 28A. ID (T=25°C): 45A. Idss (max): 100uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 3800pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 508 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 180A. IDss (min): 10uA. Marking on the case: W45NM60. Number of terminals: 3. Pd (Power Dissipation, Max): 417W. RoHS: yes. Spec info: Idm--180Ap (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 30 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 20A, 10uA, 0.22 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2600pF. Cost): 280pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1700 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: no. Id(imp): 80A. Marking on the case: K20J50D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 100 ns. Technology: Field Effect POWER MOS Type (MOSVII). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), PDFN56, 40V, 161A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 161A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 58 ns. Ciss Gate Capacitance [pF]: 7150pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 60V, 104A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 104A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.005 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 56 ns. Ciss Gate Capacitance [pF]: 6870pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 0.47A, 0.47A, 3 Ohms, 60V. ID (T=25°C): 0.47A. Idss (max): 0.47A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 1W. Technology: V-MOS

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 70V, 35A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 35A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB35N07-E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 200 ns. Switch-off delay tf[nsec.]: 800 ns. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, 1.7A, 75uA, 0.25 Ohms, SOT-223 ( TO-226 ), SOT-223, 45V. ID (T=25°C): 1.7A. Idss (max): 75uA. On-resistance Rds On: 0.25 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 45V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. IDss (min): 30uA. Note: screen printing/SMD code 1NV04P. Pd (Power Dissipation, Max): 7W. Assembly/installation: surface-mounted component (SMD). Technology: OMNIFET II fully autoprotected Power MOSFET

N-channel transistor, PCB soldering, TO-220AB, 650V, 38A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 38A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.099 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 193 ns. Ciss Gate Capacitance [pF]: 2940pF. Maximum dissipation Ptot [W]: 277W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET

ROHS: Yes. Housing: SOT223. Power: 2W. Assembly/installation: SMD. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 700mA, 0.7A. On-state resistance: 2 Ohms. Gate-source voltage: ±20V. Channel type: 'enhanced'

Housing: TO92. Assembly/installation: THT. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 0.6A. On-state resistance: 1 Ohms. Gate-source voltage: ±20V. Power: 0.7W. Channel type: 'enhanced'