N-channel FETs and MOSFETs

N-channel transistor, 5A, 8A, 8A, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 5A, 8A, 10uA, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 32A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 150W. Technology: V-MOS

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET

N-channel transistor, 200A, Other, Other, 1200V. Ic(T=100°C): 200A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 40pF. Cost): 14pF. CE diode: no. Channel type: N. Function: Dual IGBT transistor (Isolated). Germanium diode: no. Collector current: 200A. Ic(pulse): 400A. Number of terminals: 7. Dimensions: 108x62x31mm. Pd (Power Dissipation, Max): 1500W. RoHS: yes. Spec info: High Power Switching. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 250 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V

N-channel transistor, 5A, 1uA, 0.024...0.042 Ohms, WSON6, 2mm × 2mm plastic case, 30 v. ID (T=25°C): 5A. Idss (max): 1uA. On-resistance Rds On: 0.024...0.042 Ohms. Housing: WSON6. Housing (according to data sheet): 2mm × 2mm plastic case. Voltage Vds(max): 30 v. C(in): 260pF. Cost): 140pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 57A. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 17W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 4.2 ns. Td(on): 2.8 ns. Technology: N-Channel NexFET™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.9V

N-channel transistor, 600A, Other, Other, 1200V. Ic(T=100°C): 600A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 37pF. CE diode: yes. Channel type: N. Function: VCE(sat) 1.7V (Ic=600A, VGE=15V, 25°C). Germanium diode: no. Collector current: 600A. Ic(pulse): 1200A. Number of terminals: 10. Dimensions: 172x89x37mm. Pd (Power Dissipation, Max): 3350W. RoHS: yes. Spec info: ICRM--Tp=1mS 1200A. Assembly/installation: PCB through-hole mounting. Td(off): 0.7 ns. Td(on): 0.21 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 6A/-4.2A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6A/-4.2A. RoHS: yes. Component family: MOSFET, 2 x N-MOS, 2 x P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: C3025LS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms/0.05 Ohms @ 6/-4.2A. Gate breakdown voltage Ugs [V]: 1.2V/-2V. Switch-on time ton [nsec.]: 11.2 ns/7.5 ns. Switch-off delay tf[nsec.]: 14.5/28.2 ns. Ciss Gate Capacitance [pF]: 590/631pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 900pF. Cost): 500pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) ECW20P20. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 155 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V

N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ECX10P20. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V

N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. G-S Protection: no. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 7A, 11A, 10uA, 0.33 Ohms, TO-220FP, TO-220F, 600V, 650V, 0.32 Ohms, TO-220F. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Drain-source voltage (Vds): 650V. On-resistance Rds On: 0.32 Ohms. Housing: TO-220F. Channel type: N. IDss (min): 1uA. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Technology: SuperFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Type of transistor: MOSFET power transistor. Max drain current: 11A. Power: 36W

N-channel transistor, 9.9A, 16.5A, 10uA, 0.31 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 9.9A. ID (T=25°C): 16.5A. Idss (max): 10uA. On-resistance Rds On: 0.31 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 1495pF. Cost): 235pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 490 ns. Type of transistor: MOSFET. Function: PDP TV, Uninterruptible Power Supply. G-S Protection: no. Id(imp): 66A. IDss (min): 1uA. Marking on the case: FDA16N50. Number of terminals: 3. Pd (Power Dissipation, Max): 205W. RoHS: yes. Spec info: Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: UniFET MOSFET, DMOS technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 100uA, 0.15 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 400V. Idss (max): 100uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 400V. C(in): 2280pF. Cost): 370pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. IDss (min): 10uA. Marking on the case: FDA24N40F. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 40 ns. Technology: UniFET MOSFET, DMOS technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-3P, 500V, 48A. Housing: PCB soldering. Housing: TO-3P. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 48A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FDA50N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 220 ns. Switch-off delay tf[nsec.]: 460 ns. Ciss Gate Capacitance [pF]: 6460pF. Maximum dissipation Ptot [W]: 625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V. ID (T=100°C): 35A. ID (T=25°C): 59A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 3090pF. Cost): 630pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. G-S Protection: no. Id(imp): 236A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 392W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 70 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 44.2A, 69A, 10uA, 0.034 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V. ID (T=100°C): 44.2A. ID (T=25°C): 69A. Idss (max): 10uA. On-resistance Rds On: 0.034 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 3570pF. Cost): 750pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. G-S Protection: no. Id(imp): 276A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 95 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0087 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 40V. C(in): 1970pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SUPERSOT-6, 8V, 1.5A/1.5A. Housing: PCB soldering (SMD). Housing: SUPERSOT-6. Drain-source voltage Uds [V]: 8V. Drain Current Id [A] @ 25°C: 1.5A/1.5A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 6. Gate breakdown voltage Ugs [V]: 3V. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 30A, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. On-resistance Rds On: 0.023 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FDD5690. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 1110pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0088 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 100A. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V

N-channel transistor, 15A, 59A, 59A, 0.016 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 15A. ID (T=25°C): 59A. Idss (max): 59A. On-resistance Rds On: 0.016 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1400pF. Cost): 317pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 100A. Marking on the case: FDD6635. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 50A, 65A, 1uA, 8.2M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 65A. Idss (max): 1uA. On-resistance Rds On: 8.2M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 5070pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 100A. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 69 ns. Td(on): 17 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.8V

N-channel transistor, 11.4A, 18A, 500uA, 61m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 150V. ID (T=100°C): 11.4A. ID (T=25°C): 18A. Idss (max): 500uA. On-resistance Rds On: 61m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 150V. C(in): 575pF. Cost): 64pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 56.4 ns. Type of transistor: MOSFET. Function: Vitesse de commutation rapide, faible charge de grille. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Note: High performance trench technology. Number of terminals: 2. Pd (Power Dissipation, Max): 56.8W. RoHS: yes. Spec info: extremely low RDS(on) resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 15.8 ns. Td(on): 10.3 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 15.2A, 57A, 1uA, 0.085 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 15.2A. ID (T=25°C): 57A. Idss (max): 1uA. On-resistance Rds On: 0.085 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1970pF. Cost): 250pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. G-S Protection: no. Id(imp): 100A. IDss (min): 1uA. Marking on the case: FDD8447L. Number of terminals: 3. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 12 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 11A, 40A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 880pF. Cost): 195pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 23 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 7 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V