N-channel FETs and MOSFETs

N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 560V. C(in): 750pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 22.8A. IDss (min): 0.5uA. Marking on the case: 08N50C3. Number of terminals: 2. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 3.8A, 6A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 800V. C(in): 785pF. Cost): 33pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. G-S Protection: no. Id(imp): 18A. IDss (min): 10uA. Marking on the case: 06N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.56 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 24A. IDss (min): 20uA. Marking on the case: 08N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 104W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, PCB soldering, TO-220AB, 100V, 10A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 10N10. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.17 Ohms @ 7.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 426pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: SPP17N80C2. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, PCB soldering, TO-247, 650V, 20.7A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 20.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60C3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 13.1A. Gate breakdown voltage Ugs [V]: 3.9V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 2400pF. Maximum dissipation Ptot [W]: 208W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, MS-012, 30 v, 8A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. C(in): 470pF. Cost): 70pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

Housing: DPAK. Assembly/installation: SMD. Type of transistor: N-MOSFET. Polarity: unipolar. Technology: MDmesh™. Drain-source voltage: 710V. Drain current: 12A. On-state resistance: 279m Ohms. Gate-source voltage: ±25V. Power: 90W

N-channel transistor, 2.77A, 4.4A, 50uA, 1.2 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. On-resistance Rds On: 1.2 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 545pF. Cost): 45pF. Channel type: N. Number of channels: 1. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: Switching applications, Gate charge minimized, Low IDSS. G-S Protection: yes. Id(imp): 17.6A. IDss (min): 5uA. Marking on the case: 5N52K3. Pd (Power Dissipation, Max): 70W. Spec info: Enhancement type. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. On-resistance Rds On: 1.25 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Switching applications, Gate charge minimized. G-S Protection: yes. Id(imp): 17.6A. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. Spec info: Enhancement type. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220FP, 1 kV, 3.5A. Housing: PCB soldering. Housing: TO-220FP. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: F5NK100Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.75A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1154pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 7A, TO-220FP, TO-220FP, 600V. Ic(T=100°C): 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Collector/emitter voltage Vceo: 600V. C(in): 610pF. Cost): 65pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 50 ns. Function: light dimmer, Static relay, Motor driver. Germanium diode: no. Collector current: 20A. Ic(pulse): 100A. Marking on the case: GF10NB60SD. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: Low on-voltage drop (VCE(sat)). Assembly/installation: PCB through-hole mounting. Td(off): 1.2 ns. Td(on): 0.7 ns. Technology: PowerMESH IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.35V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V

N-channel transistor, 10A, TO-220, TO-220, 600V. Ic(T=100°C): 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 600V. C(in): 380pF. Cost): 46pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 35 ns. Function: High frequency motor controls. Germanium diode: no. Collector current: 20A. Ic(pulse): 30A. Marking on the case: GP10NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: Short-circuit withstand time 10us. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. C(in): 1350pF. Cost): 175pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast power MOSFET transistor. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Note: Viso 4000V. Marking on the case: H8NA60FI. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 150pF. Cost): 30pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 4A. IDss (min): 1uA. Marking on the case: 4NF20L. Pd (Power Dissipation, Max): 3.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10.4 ns. Td(on): 2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

N-channel transistor, 5.7A, 10A, 50uA, 0.65 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1370pF. Cost): 156pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Zener-Protected. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: P10NK60ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 11A. ID (T=25°C): 16A. Idss (max): 10uA. On-resistance Rds On: 0.08 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 345pF. Cost): 72pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 64A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V

N-channel transistor, 60.4k Ohms, 60.4k Ohms, 100uA, 3m Ohms, TO-220, TO-220, 40V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 60.4k Ohms. Idss (max): 100uA. On-resistance Rds On: 3m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 40V. C(in): 5100pF. Cost): 1270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: switching, automotive applications. G-S Protection: no. Id(imp): 480A. IDss (min): 10uA. Marking on the case: 200N4F3. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: STripFET™ Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

ROHS: Yes. Housing: TO220-3. Assembly/installation: THT. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Technology: MDmesh™. Drain-source voltage: 550V. Drain current: 20A. On-state resistance: 250m Ohms. Gate-source voltage: ±30V. Power: 192W. Channel type: 'enhanced'

N-channel transistor, 3.5A, 3.5A, TO-220FP, TO-220FP, 900V. ID (T=25°C): 3.5A. Idss (max): 3.5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected. Assembly/installation: PCB through-hole mounting. Technology: PowerMESH III