N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), SOT-23, 240V, 0.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 240V. Drain Current Id [A] @ 25°C: 0.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SRs. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.1A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 77pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.22A, 100uA, 0.7 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.22A. Idss (max): 100uA. On-resistance Rds On: 0.7 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 27pF. Cost): 13pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.88A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Spec info: Logic Level Enhancement Mode. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 2.5 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V

N-channel transistor, 0.2A, 1.4 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.2A. On-resistance Rds On: 1.4 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 50pF. Cost): 25pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 1A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: Logic Level Enhancement Mode. Weight: 0.008g. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 20 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.5V

N-channel transistor, PCB soldering (SMD), SOT-23, 50V, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 200mA. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SS. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 36ns. Ciss Gate Capacitance [pF]: 27pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 50V, 0.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J1. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 250V, 0.03A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 0.03A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: STs. Drain current through resistor Rds [Ohm] @ Ids [A]: 30 Ohms @ 15mA. Gate breakdown voltage Ugs [V]: 1.4V. Switch-on time ton [nsec.]: 8.7 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 76pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 55V, 0.54A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 0.54A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.43 Ohm @ 0.27A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 75pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.25A, 1000uA, 5 Ohms, TO-92, TO-92, 240V. ID (T=25°C): 0.25A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 240V. C(in): 80pF. Cost): 15pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. G-S Protection: no. Id(imp): 1A. IDss (min): 100uA. Marking on the case: SS88. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 5 ns. Technology: 'Enhancement mode'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.6V

N-channel transistor, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V. ID (T=25°C): 0.19A. Idss (max): 1uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): SOT54. Voltage Vds(max): 100V. C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very fast switching, Logic level compatible. G-S Protection: no. Id(imp): 0.8A. IDss (min): 0.01uA. Temperature: +150°C. Pd (Power Dissipation, Max): 0.83W. Td(off): 12 ns. Td(on): 3 ns. Technology: Enhancement mode, TrenchMOS™ technology.. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 0.12A, 0.19A, 10uA, 5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=100°C): 0.12A. ID (T=25°C): 0.19A. Idss (max): 10uA. On-resistance Rds On: 5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very Fast Switching. G-S Protection: no. Id(imp): 0.8A. IDss (min): 0.01uA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: Logic level compatible. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V

N-channel transistor, 60V, 0.10 Ohms, TO-220. Drain-source voltage (Vds): 60V. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 7A. Power: 50W. Control: Logic-Level

N-channel transistor, PCB soldering, TO-220AB, 60V, 24A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 24A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BTS132. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 250 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 42V, 0.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 0.6A. RoHS: yes. Component family: low-side MOSFET. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.9 Ohms @ 0.2A. Switch-on time ton [nsec.]: 38us. Switch-off delay tf[nsec.]: 45us. Maximum dissipation Ptot [W]: 0.78W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 42V, 0.6A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 0.6A. RoHS: yes. Component family: low-side MOSFET. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.9 Ohms @ 0.2A. Switch-on time ton [nsec.]: 38us. Switch-off delay tf[nsec.]: 45us. Maximum dissipation Ptot [W]: 0.78W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), TO-263/5, 42V, 5A. Housing: PCB soldering (SMD). Housing: TO-263/5. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 5. Manufacturer's marking: BTS410E2. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.22 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 125us. Switch-off delay tf[nsec.]: 85us. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 45V, 1.4A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 45V. Drain Current Id [A] @ 25°C: 1.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS4141N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 0.5A. Switch-on time ton [nsec.]: 100us. Switch-off delay tf[nsec.]: 150us. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, 38m Ohms, TO-220, TO-220-5-11, 42V, 11A. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-5-11. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 11A. Number of terminals: 5. RoHS: yes. Spec info: PROFET N-MOS 43V 11A. Assembly/installation: PCB through-hole mounting. Manufacturer's marking: BTS432E2. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Switch-on time ton [nsec.]: 300us. Switch-off delay tf[nsec.]: 80us. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK/5, TO-263, 42V, 11A. Housing: PCB soldering (SMD). Housing: D²-PAK/5. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS432E2-SMD. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Switch-on time ton [nsec.]: 300us. Switch-off delay tf[nsec.]: 80us. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK/5, TO-263, 41V, 9.8A. Housing: PCB soldering (SMD). Housing: D²-PAK/5. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 41V. Drain Current Id [A] @ 25°C: 9.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.072 Ohm @ 2A. Switch-on time ton [nsec.]: 200us. Switch-off delay tf[nsec.]: 250us. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK/7, TO-263, 18V, 40A. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 18V. Drain Current Id [A] @ 25°C: 40A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: S50010E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohm @ 40A. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), P-DSO-12, 40V, 2.4A. Housing: PCB soldering (SMD). Housing: P-DSO-12. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 2.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 12. Manufacturer's marking: BTS5210L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.14 Ohms @ 2.4A. Switch-on time ton [nsec.]: 250us. Switch-off delay tf[nsec.]: 270us. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), P-DSO-12, 40V, 3.7A. Housing: PCB soldering (SMD). Housing: P-DSO-12. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 3.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 12. Manufacturer's marking: BTS5215L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 2A. Switch-on time ton [nsec.]: 250us. Switch-off delay tf[nsec.]: 270us. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK/7, TO-263, 34V, 4A. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 34V. Drain Current Id [A] @ 25°C: 4A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS611L1. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.8A. Switch-on time ton [nsec.]: 400us. Switch-off delay tf[nsec.]: 400us. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D-PAK/5, TO-252, 38V, 7A. Housing: PCB soldering (SMD). Housing: D-PAK/5. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 38V. Drain Current Id [A] @ 25°C: 7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS6142D. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.012 Ohms @ 7.5A. Switch-on time ton [nsec.]: 600us. Switch-off delay tf[nsec.]: 600us. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), P-DSO-20, 34V, 2.9A. Housing: PCB soldering (SMD). Housing: P-DSO-20. Drain-source voltage Uds [V]: 34V. Drain Current Id [A] @ 25°C: 2.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS721L1. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ 2A. Switch-on time ton [nsec.]: 400us. Switch-off delay tf[nsec.]: 400us. Maximum dissipation Ptot [W]: 3.7W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C