N-channel FETs and MOSFETs

N-channel transistor, 500V, TO220AB. Vdss (Drain to Source Voltage): 500V. Housing: TO220AB. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 4.5A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 75W. Mounting Type: THT

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 500V, 8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840ASPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 24A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F8788. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0028 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 5720pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 3.5A/-2.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms/025 Ohms @ 2.2/-1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 11A, 17A, 250uA, 0.26 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2830pF. Cost): 3310pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 68A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 17A, 23A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 17A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1200pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Marking on the case: B23N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V

N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. On-resistance Rds On: 0.0021 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 8970pF. Cost): 1020pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 44 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 1080A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 21A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.082 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 2370pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 124A. IDss (min): 25uA. Marking on the case: FB32N20D. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V

N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 840A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Marking on the case: FB3207. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12A, 17A, 250uA, 80m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. G-S Protection: no. Id(imp): 51A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 7 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.9V. Vgs(th) min.: 3V

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 33A, 46A, 1mA, 38m Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 1mA. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 4560pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Class-D Audio Amplifier 300W-500W (Half-bridge). G-S Protection: no. Id(imp): 180A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. On-resistance Rds On: 0.072 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. G-S Protection: no. Id(imp): 390A. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 100V, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 75A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFB4710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 35 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 6160pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 180A, 250A, 150uA, 1.5M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 180A. ID (T=25°C): 250A. Idss (max): 150uA. On-resistance Rds On: 1.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 7330pF. Cost): 1095pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. G-S Protection: no. Id(imp): 1000A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 78 ns. Td(on): 19 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V

N-channel transistor, 60.4k Ohms, 172A, 150uA, 2M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 172A. Idss (max): 150uA. On-resistance Rds On: 2M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 4730pF. Cost): 680pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. G-S Protection: no. Id(imp): 770A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 143W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 24 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 250uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 510pF. Cost): 70pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 9.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 800V, 4.1A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 4.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFBE30PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 82 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.2A, 1.7A, 0.025mA, 250uA, 0.20 Ohms, DIP, DH-1 house, DIP-4, 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 310pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: FET. Function: td(on) 10ns, td(off) 13ns. G-S Protection: no. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, DH-1 house, DIP-4, 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 640pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 88 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, HD-1, 60V, 2.5A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD024PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, DIP4, 100V, 1A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, HD-1, 200V, 0.8A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD220PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ 0.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 260pF. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C