N-channel FETs and MOSFETs

N-channel transistor, 8.4A, 10.4A, 10uA, 10.4A, 0.014 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.4A. ID (T=25°C): 10.4A. Idss: 10uA. Idss (max): 10.4A. On-resistance Rds On: 0.014 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 450pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: fast Switching, DC/DC Converter. G-S Protection: no. Id(imp): 40A. Marking on the case: 4800C G M. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Power MOSFET'

N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. On-resistance Rds On: 48m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 8440pF. Cost): 1775pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 1uA. Marking on the case: 88N30W. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 20A, 32A, 250uA, 0.02 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 20A. ID (T=25°C): 32A. Idss (max): 250uA. On-resistance Rds On: 0.02 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1170pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. G-S Protection: no. Id(imp): 150A. IDss (min): 1uA. Marking on the case: 9962GH. Number of terminals: 2. Pd (Power Dissipation, Max): 27.8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 8 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, DIP, DIP-8. Housing: DIP. Housing (according to data sheet): DIP-8. Channel type: N. Quantity per case: 2. Function: MOS-N-FET. Number of terminals: 8. RoHS: yes. Spec info: 0.050R (50m Ohms). Assembly/installation: PCB through-hole mounting

N-channel transistor, 16A, 25A, 250uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 250uA. On-resistance Rds On: 0.036 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Marking on the case: 9971GH. Number of terminals: 2. Pd (Power Dissipation, Max): 39W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 14A, 23A, 25uA, 0.036 Ohms, TO-220, TO-220CFM, 60V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 25uA. On-resistance Rds On: 0.036 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220CFM. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. G-S Protection: NO. Id(imp): 80A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 4A, 7A, 0.050R (50m Ohms), SO, SO-8, 60V. ID (T=100°C): 4A. ID (T=25°C): 7A. On-resistance Rds On: 0.050R (50m Ohms). Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 2. Function: tf 5.5ns, td(on) 9.6ns, td(off) 30ns. Id(imp): 28A. Marking on the case: 9971GM. Number of terminals: 8. Pd (Power Dissipation, Max): 4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Gate/source voltage Vgs: 20V

N-channel transistor, 4A, 4A, SOT-89, SOT-89, 20V. ID (T=25°C): 4A. Idss (max): 4A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Voltage Vds(max): 20V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 12ns. Assembly/installation: surface-mounted component (SMD). Technology: 'Enhancement Mode MOSFET'

N-channel transistor, 27A, TO-247, TO-247, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 600V. C(in): 1685pF. Cost): 210pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 55ms. Function: High frequency switch mode power supplies. Germanium diode: no. Collector current: 56A. Ic(pulse): 65A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 41A, 1000uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 41A. Idss (max): 1000uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 4360pF. Cost): 895pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 280 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 164A. IDss (min): 250uA. Pd (Power Dissipation, Max): 378W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOS 7 FREDFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 7400pF. Cost): 1000pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 176A. IDss (min): 25uA. Pd (Power Dissipation, Max): 450W. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 14 ns. Technology: Power MOSV. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 12A, 250uA, 0.75 Ohms, TO-247, TO-247, 800V. ID (T=25°C): 12A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2600pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 48A. IDss (min): 25uA. Pd (Power Dissipation, Max): 260W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: Power MOSV. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, PCB soldering (SMD), SOT-343, 5V, 0.1A. Housing: PCB soldering (SMD). Housing: SOT-343. Drain-source voltage Uds [V]: 5V. Drain Current Id [A] @ 25°C: 0.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Manufacturer's marking: 5Fx. Gate breakdown voltage Ugs [V]: 0.37V. Maximum dissipation Ptot [W]: 0.27W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor. Quantity per case: 1. Note: TU

N-channel transistor. Type of transistor: FET transistor. Channel type: N. Max drain current: 2mA. Max drain current: TO-92

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Operating temperature: -...+150°C. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 25mA, 25mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V

N-channel transistor, PCB soldering, TO-92, AM/FM/VHF, 25V, 10mA, TO-92, 39V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): AM/FM/VHF. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 10mA. Housing (according to data sheet): TO-92. Voltage Vds(max): 39V. RoHS: no. Component family: N-Channel JFET Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF246A. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -14.5V @ +15V. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 14.5V. Gate/source voltage (off) min.: 0.6V

N-channel transistor, 13mA, TO-92, TO-92, 30 v. Idss (max): 13mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 18mA, TO-92, TO-92, 30 v. Idss (max): 18mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 11mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 30mA, 30mA, 20V. ID (T=25°C): 30mA. Idss (max): 30mA. Voltage Vds(max): 20V. Channel type: N. Quantity per case: 1. Type of transistor: FET. Pd (Power Dissipation, Max): 0.3W

N-channel transistor, 25mA, 6.5mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 6.5mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Marking on the case: 20*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 2.2V. Gate/source voltage (off) min.: 0.4V

N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 25mA, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V

N-channel transistor, 30mA, 18mA, SOT-143, SOT-143, 18V. ID (T=25°C): 30mA. Idss (max): 18mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 18V. C(in): 3pF. Cost): 1.2pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: yes. IDss (min): 2mA. Marking on the case: M90. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET