N-channel FETs and MOSFETs

N-channel transistor. Quantity per case: 1. Note: TU

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Operating temperature: -...+150°C. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 80mA, TO-92, TO-92, 39V. Idss (max): 80mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 39V. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. Function: AM/FM/VHF. G-S Protection: no. IDss (min): 30mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 14.5V. Gate/source voltage (off) min.: 0.6V

N-channel transistor, 13mA, TO-92, TO-92, 30 v. Idss (max): 13mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 18mA, TO-92, TO-92, 30 v. Idss (max): 18mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 11mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 25mA, 6.5mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 6.5mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Marking on the case: 20*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 2.2V. Gate/source voltage (off) min.: 0.4V

N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 25mA, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V

N-channel transistor, 30mA, 18mA, SOT-143, SOT-143, 18V. ID (T=25°C): 30mA. Idss (max): 18mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 18V. C(in): 3pF. Cost): 1.2pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: yes. IDss (min): 2mA. Marking on the case: M90. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET

N-channel transistor, 30mA, 4mA, SOT-143, SOT-143, 20V. ID (T=25°C): 30mA. Idss (max): 4mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 20V. C(in): 2.3pF. Cost): 0.8pF. Quantity per case: 1. Function: N MOSFET transistor. IDss (min): 2mA. Note: screen printing/SMD code MH. Marking on the case: MH. Number of terminals: 4. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD)

N-channel transistor, 30mA, 15mA, SOT-143, SOT-143, 12V. ID (T=25°C): 30mA. Idss (max): 15mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 12V. C(in): 2.1pF. Cost): 1.1pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: no. IDss (min): 5mA. Marking on the case: MOS. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET. Operating temperature: -55...+150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 5mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 5mA. RoHS: yes. Component family: N-Channel JFET Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M2. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +10V. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 120mA. Idss (max): 30nA. On-resistance Rds On: 15 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 85pF. Cost): 20pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Diode Tff(25°C): 8 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 2A. Marking on the case: BS107. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 250mA, 30nA, 6.4 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 250mA. Idss (max): 30nA. On-resistance Rds On: 6.4 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 60pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 500mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, TO-92, 0.5A, 10nA, 1.2 Ohms, TO-92, 60V. Housing: TO-92. ID (T=25°C): 0.5A. Idss (max): 10nA. On-resistance Rds On: 1.2 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. Channel type: N. C(in): 24pF. Cost): 40pF. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 1.2A. IDss (min): 0.5uA. Marking on the case: BS170. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, Other, Other, 600V. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Germanium diode: no. Collector current: 30A. Number of terminals: 24. Dimensions: 107.5x45x17mm. Pd (Power Dissipation, Max): 700W. RoHS: yes. Spec info: 7x IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 250 ns. Td(on): 50 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 0.1A, 0.1A, 15 Ohms, 50V. ID (T=25°C): 0.1A. Idss (max): 0.1A. On-resistance Rds On: 15 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: 5ns...20ns. Pd (Power Dissipation, Max): 0.3W. Technology: D-MOS Log.L

N-channel transistor, 60V, SOT23. Vdss (Drain to Source Voltage): 60V. Housing: SOT23. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 265mA. Gate/source voltage Vgs max: 20V. Pd (Power Dissipation, Max): 0.31W. Mounting Type: SMD. MSL: 1

N-channel transistor, PCB soldering (SMD), SOT-223, 200V, 0.6A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.6A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP297. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 0.65A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 160 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.22A, 100uA, 0.7 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.22A. Idss (max): 100uA. On-resistance Rds On: 0.7 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 27pF. Cost): 13pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.88A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Spec info: Logic Level Enhancement Mode. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 2.5 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V

N-channel transistor, 0.2A, 1.4 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.2A. On-resistance Rds On: 1.4 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 50pF. Cost): 25pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 1A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: Logic Level Enhancement Mode. Weight: 0.008g. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 20 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.5V

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 50V, 0.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J1. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 250V, 0.03A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 0.03A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: STs. Drain current through resistor Rds [Ohm] @ Ids [A]: 30 Ohms @ 15mA. Gate breakdown voltage Ugs [V]: 1.4V. Switch-on time ton [nsec.]: 8.7 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 76pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V. ID (T=25°C): 0.19A. Idss (max): 1uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): SOT54. Voltage Vds(max): 100V. C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very fast switching, Logic level compatible. G-S Protection: no. Id(imp): 0.8A. IDss (min): 0.01uA. Temperature: +150°C. Pd (Power Dissipation, Max): 0.83W. Td(off): 12 ns. Td(on): 3 ns. Technology: Enhancement mode, TrenchMOS™ technology.. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 0.12A, 0.19A, 10uA, 5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=100°C): 0.12A. ID (T=25°C): 0.19A. Idss (max): 10uA. On-resistance Rds On: 5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very Fast Switching. G-S Protection: no. Id(imp): 0.8A. IDss (min): 0.01uA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: Logic level compatible. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V