N-channel FETs and MOSFETs

N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.9A. ID (T=25°C): 5.8A. Idss (max): 5uA. On-resistance Rds On: 23.4m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 621pF. Cost): 118pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.1 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 3.5A, 4.1A, 1uA, 4.1A, 0.052 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. On-resistance Rds On: 0.052 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. G-S Protection: no. Id(imp): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 20V

N-channel transistor, 5.2A, 6.5A, 5uA, 18M Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 18M Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 20V. C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: yes. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Spec info: ESD protected. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V

ROHS: Yes. Housing: SO8. Assembly/installation: SMD. Type of transistor: N-MOSFET. Polarity: unipolar. Properties of semiconductor: ESD protection. Drain-source voltage: 60V. Drain current: 10.5A. On-state resistance: 9.8m Ohms. Gate-source voltage: ±20V. Charge: 7nC. Power: 2W. Channel type: 'enhanced'

N-channel transistor, 10A, 12.7A, 20mA, 0.0098 Ohms, SO, SO-8, 30 v. ID (T=100°C): 10A. ID (T=25°C): 12.7A. Idss (max): 20mA. On-resistance Rds On: 0.0098 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1980pF. Cost): 317pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 11.2 ns. Type of transistor: MOSFET. Function: FET in SMPS, load switching. G-S Protection: no. Id(imp): 60A. IDss (min): 0.02mA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 27 ns. Td(on): 5.5 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V

N-channel transistor, 9.6A, 12A, 20mA, 0.0058 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.6A. ID (T=25°C): 12A. Idss (max): 20mA. On-resistance Rds On: 0.0058 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2154pF. Cost): 474pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Function: t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C. G-S Protection: no. Id(imp): 180A. IDss (min): 0.1mA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25.2 ns. Td(on): 6.8 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.3V

N-channel transistor, 3.6A, 4.5A, 5uA, 46m Ohms, SO, SO-8, 60V. ID (T=100°C): 3.6A. ID (T=25°C): 4.5A. Idss (max): 5uA. On-resistance Rds On: 46m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 2. Trr Diode (Min.): 27.5us. Function: MOSFET transistor. Rds (ON) very low. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 4.7V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 12A, 12A, 5uA, 47m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 12A. ID (T=25°C): 12A. Idss (max): 5uA. On-resistance Rds On: 47m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 450pF. Cost): 61pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 27.6 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 4.2 ns. Technology: 'Latest Trench Power MOSFET technology'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 42A, 54A, 5uA, 6m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 42A. ID (T=25°C): 54A. Idss (max): 5uA. On-resistance Rds On: 6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 951pF. Cost): 373pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 10.2 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: Very Low RDS(on) at 10VGS. Assembly/installation: surface-mounted component (SMD). Td(off): 18.5 ns. Td(on): 6.25 ns. Technology: 'Latest Trench Power MOSFET technology'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.8V

N-channel transistor, 2.5A, 3.9A, 10uA, 1.2 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 400V. ID (T=100°C): 2.5A. ID (T=25°C): 3.9A. Idss (max): 10uA. On-resistance Rds On: 1.2 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 400V. C(in): 273pF. Cost): 16pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 172ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 15A. IDss (min): 1uA. Pd (Power Dissipation, Max): 52W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 18 ns. Td(on): 17 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 5.7A, 9A, 10uA, 0.71 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 500V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 10uA. On-resistance Rds On: 0.71 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. C(in): 962pF. Cost): 98pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 332ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 27A. IDss (min): 1uA. Pd (Power Dissipation, Max): 178W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.3V

N-channel transistor, 51A, 80A, 5uA, 5.3m Ohms, PowerPAK SO-8, PowerSO-8 ( DFN5X6 ), 60V. ID (T=100°C): 51A. ID (T=25°C): 80A. Idss (max): 5uA. On-resistance Rds On: 5.3m Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Voltage Vds(max): 60V. C(in): 2850pF. Cost): 258pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 19 ns. Type of transistor: MOSFET. Function: t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C. G-S Protection: no. Id(imp): 170A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 8 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.5V

N-channel transistor, 115A, 150A, 5uA, 1.9m Ohms, PowerPAK SO-8, PowerSO-8 ( DFN5X6 ), 30 v. ID (T=100°C): 115A. ID (T=25°C): 150A. Idss (max): 5uA. On-resistance Rds On: 1.9m Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Voltage Vds(max): 30 v. C(in): 3430pF. Cost): 1327pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Function: Idsm--54A/25°C, Idsm--43A/70°C. G-S Protection: no. Id(imp): 340A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33.8 ns. Td(on): 7.5 ns. Technology: 'Latest Trench Power AlphaMOS technology'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

ROHS: Yes. Housing: TO220. Power: 250W. Assembly/installation: THT. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 600V. Drain current: 10A, 7.2A. On-state resistance: 600m Ohms. Gate-source voltage: ±30V. Charge: 31nC

N-channel transistor, 24A, 28A, 25uA, 25m Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 30 v. C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 95A. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 24A, 28A, 25uA, 25m Ohms, TO-220, TO-220, 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 95A. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 mS. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

N-channel transistor, 24A, 28A, 25uA, 25m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 95A. IDss (min): 1uA. Marking on the case: 40T03GS. Number of terminals: 3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

N-channel transistor, 8.4A, 10.4A, 10uA, 10.4A, 0.014 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.4A. ID (T=25°C): 10.4A. Idss: 10uA. Idss (max): 10.4A. On-resistance Rds On: 0.014 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 450pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: fast Switching, DC/DC Converter. G-S Protection: no. Id(imp): 40A. Marking on the case: 4800C G M. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Power MOSFET'

N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. On-resistance Rds On: 48m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 8440pF. Cost): 1775pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 1uA. Marking on the case: 88N30W. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 16A, 25A, 250uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 250uA. On-resistance Rds On: 0.036 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Marking on the case: 9971GH. Number of terminals: 2. Pd (Power Dissipation, Max): 39W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 14A, 23A, 25uA, 0.036 Ohms, TO-220, TO-220CFM, 60V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 25uA. On-resistance Rds On: 0.036 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220CFM. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. G-S Protection: NO. Id(imp): 80A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 4A, 7A, 0.050R (50m Ohms), SO, SO-8, 60V. ID (T=100°C): 4A. ID (T=25°C): 7A. On-resistance Rds On: 0.050R (50m Ohms). Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 2. Function: tf 5.5ns, td(on) 9.6ns, td(off) 30ns. Id(imp): 28A. Marking on the case: 9971GM. Number of terminals: 8. Pd (Power Dissipation, Max): 4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Gate/source voltage Vgs: 20V

N-channel transistor, 27A, TO-247, TO-247, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 600V. C(in): 1685pF. Cost): 210pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 55ms. Function: High frequency switch mode power supplies. Germanium diode: no. Collector current: 56A. Ic(pulse): 65A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 41A, 1000uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 41A. Idss (max): 1000uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 4360pF. Cost): 895pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 280 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 164A. IDss (min): 250uA. Pd (Power Dissipation, Max): 378W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOS 7 FREDFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 7400pF. Cost): 1000pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 176A. IDss (min): 25uA. Pd (Power Dissipation, Max): 450W. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 14 ns. Technology: Power MOSV. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v