N-channel FETs and MOSFETs

N-channel transistor, 25A, 33A, 250uA, 0.052 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 25A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.052 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 1400pF. Cost): 330pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 110A. IDss (min): 25uA. Equivalents: IRF540NSPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 33A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F540NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 200V, 3.3A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 3.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF610PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 11 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 72A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 200V, TO220. Vdss (Drain to Source Voltage): 200V. Housing: TO220. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 18A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 150W. Mounting Type: THT

N-channel transistor, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 8.5A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 1300pF. Cost): 330pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 7.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7201. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 550pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 400V, 3.3A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 3.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF720PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 410pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.9A, 4.9A, 25uA, SO, SO-8, 30 v. ID (T=100°C): 3.9A. ID (T=25°C): 4.9A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 2. Type of transistor: MOSFET. Function: 0.05R. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&N-HEXFET Power MOSFETFET

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 4A/-3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 4A/-3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7309. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.1 Ohms @ 2.4/-1.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8/11 ns. Switch-off delay tf[nsec.]: 22/25 ns. Ciss Gate Capacitance [pF]: 520/440pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 400V, TO220AB. Vdss (Drain to Source Voltage): 400V. Housing: TO220AB. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Series: yes. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 5.5A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 1 Ohms / 3A / 10V. Vgs(th) (Max) @ Id: 3. Qg (Total Gate Charge, Max @ Vgs): IRF730PBF. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 75W. Operating temperature: 1 Ohms @ 3.3A. Mounting Type: THT. Features: 38 ns. Information: 700pF. MSL: 74W

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: N MOSFET transistor. Equivalents: IRF7313PBF. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Pd (Power Dissipation, Max): 2W. Channel type: N. Conditioning: plastic tube. Conditioning unit: 95. Quantity per case: 2. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

ROHS: Yes. Housing: SO8. Assembly/installation: SMD. Type of transistor: N-MOSFET x2. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 55V. Drain current: 4.7A. On-state resistance: 50m Ohms. Gate-source voltage: ±20V. Power: 2W

N-channel transistor, PCB soldering (SMD), SO8, 55V/-55V, 4.7A/-3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 5.9A/-4.2A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.9A/-4.2A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7389. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 5.8/-4.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.1 ns/13 ns. Switch-off delay tf[nsec.]: 26/34 ns. Ciss Gate Capacitance [pF]: 650/710pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 400V, 10A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF740SPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.2A, 13A, 25uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 25uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1600pF. Cost): 680pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 58A. IDss (min): 12uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 8.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7821. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0091 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 6.3 ns. Switch-off delay tf[nsec.]: 9.7 ns. Ciss Gate Capacitance [pF]: 1010pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 20A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.32V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 4310pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

N-channel transistor, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 320A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.6A, 2.5A, 250uA, 3 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 360pF. Cost): 92pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V