N-channel FETs and MOSFETs

N-channel transistor, 5.1A, 7.2A, 250uA, 0.27 Ohms, TO-220FP, TO-220 FULLPAK, 100V. ID (T=100°C): 5.1A. ID (T=25°C): 7.2A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220 FULLPAK. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: yes. Id(imp): 29A. IDss (min): 25uA. Pd (Power Dissipation, Max): 37W. Td(off): 19 ns. Td(on): 8.8 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, ITO-220AB, 100V, 9.7A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI530GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 5.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, ITO-220AB, 100V, 17A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI540GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Switching. G-S Protection: no. Id(imp): 10A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, ITO-220AB, 900V, 1.9A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFIBF30GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.1A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 1.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL014N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.6 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 2.8A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 2.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 400pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 200V, 0.96A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.96A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FC. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 0.58A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 14 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AC, 55V, 53A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 53A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP044N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1500pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 1900pF. Cost): 620pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 94 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 11 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 16A, 33A, 250uA, 0.052 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 16A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.052 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. G-S Protection: no. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 13A, 22A, 250uA, 0.23 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 22A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3450pF. Cost): 513pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: SMPS MOSFET. G-S Protection: no. Id(imp): 88A. IDss (min): 25uA. Pd (Power Dissipation, Max): 277W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 200V, 20A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP240PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AC, 250V, 23A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 23A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP254PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.14 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 74 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 200V, 50A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP260NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 4057pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 14A, 23A, 250uA, 0.20 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 4500pF. Cost): 1100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 500V, 14A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450LCPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 2200pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 14A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 92 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 121A, 694A, 250uA, 0.0048 Ohms, TO-247, TO-247AC, 150V. ID (T=100°C): 121A. ID (T=25°C): 694A. Idss (max): 250uA. On-resistance Rds On: 0.0048 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 150V. C(in): 10470pF. Cost): 977pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 171A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 517W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3100pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 280W

ROHS: Yes. Housing: TO247AC. Power: 366W. Assembly/installation: THT. Type of transistor: N-MOSFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 40V. Drain current: 404A. On-state resistance: 1.3m Ohms. Gate-source voltage: ±20V. Charge: 300nC. Conditioning: tubus

N-channel transistor, PCB soldering, 17.4k Ohms, 500V, 36A. Housing: PCB soldering. Housing: 17.4k Ohms. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 36A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPS37N50APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 5580pF. Maximum dissipation Ptot [W]: 446W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 49A, 71A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 49A. ID (T=25°C): 71A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2030pF. Cost): 470pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Id(imp): 280A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 13 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V