N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-264AA, 800V, 44A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 44A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK44N80P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 12000pF. Maximum dissipation Ptot [W]: 1200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-264AA, 500V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N50P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 9700pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SOT-227B (ISOTOP), 75V, 480A. Housing: SOT-227B (ISOTOP). Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 480A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: GigaMOS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0019 Ohms @ 480A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 48 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 41000pF. Maximum dissipation Ptot [W]: 940W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 0.092 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AD, 500V, 24A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH24N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.23 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. On-resistance Rds On: 24m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 4800pF. Cost): 1020pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 225A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V

Housing: TO220-3. Assembly/installation: THT. Reaction time: 41ns. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 1kV. Drain current: 6A. On-state resistance: 2.2 Ohms. Power: 300W

N-channel transistor, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 200uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2770pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 240A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 220A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V

N-channel transistor, 8 Ohms, TO-92, TO-92, 25V. On-resistance Rds On: 8 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 160pF. Cost): 35pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. G-S Protection: no. IDss (min): 100mA. IGF: 50mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Td(off): 5 ns. Td(on): 6 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.7V. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 0.5V

N-channel transistor, 9mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 9mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. C(in): 4.5pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Note: screen printing/SMD code 61S. Marking on the case: 61 S. Number of terminals: 3. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V

N-channel transistor, 60mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 60mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. Function: VHF/UHF amplifier, oscillator and mixer. G-S Protection: no. IDss (min): 24mA. IGF: 10mA. Note: screen printing/SMD code 6T. Marking on the case: 6T. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Spec info: Gate amplifier, 16dB at 100MHz and 12dB at 450MHz. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C

N-channel transistor, SOT-23, PCB soldering (SMD), TO-236AB, 50V, 0.22A. Housing: SOT-23. Housing: PCB soldering (SMD). Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.22A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: JD. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 16 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.36W

N-channel transistor, 8A, 12A, 100uA, 0.10 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 8A. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 410pF. Cost): 114pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 55.7 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 45A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Logic level gated transistor. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 9 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-264, 100V, 100A. Housing: PCB soldering. Housing: TO-264. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 100A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTY100N10E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 96 ns. Switch-off delay tf[nsec.]: 372 ns. Ciss Gate Capacitance [pF]: 10640pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SO8. Assembly/installation: SMD. Type of transistor: N-MOSFET x2. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 5A. On-state resistance: 32m Ohms. Gate-source voltage: ±20V. Charge: 22nC. Power: 2W. Channel type: 'enhanced'

Housing: TO252. Assembly/installation: SMD. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 20A. On-state resistance: 27m Ohms. Gate-source voltage: ±20V. Charge: 47nC. Power: 45W. Channel type: 'enhanced'

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 1.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDS355AN_NL. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.125 Ohms @ 1.7A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 195pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12A, 12A, 0.084 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.084 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 45A/10us. Id(imp): 45A. Note: screen printing/SMD code 55094G. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET

N-channel transistor, 12A, 10uA, 0.089 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.089 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 316pF. Cost): 105pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Function: logic level, ID pulse 45A/10us. G-S Protection: no. Id(imp): 45A. IDss (min): 1uA. Note: screen printing/SMD code 55L104G. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 9.2 ns. Technology: Power MOSFET. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 5.1A, 25uA, 0.036 Ohms, TSOP, TSOP-6, 20V. ID (T=25°C): 5.1A. Idss (max): 25uA. On-resistance Rds On: 0.036 Ohms. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. C(in): 510pF. Cost): 200pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: Lithium Ion Battery Applications, Notebook PC. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Marking on the case: 446. Number of terminals: 6. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: Gate control by logic level. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 9 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V

N-channel transistor, 83A, 118A, 250uA, 0.02 Ohms, TO-247, TO-247-3L, CASE 340CX, 900V. ID (T=100°C): 83A. ID (T=25°C): 118A. Idss (max): 250uA. On-resistance Rds On: 0.02 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247-3L, CASE 340CX. Voltage Vds(max): 900V. C(in): 4416pF. Cost): 296pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: UPS, DC/DC Converter, Boost Inverter. G-S Protection: no. Id(imp): 472A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 503W. Spec info: IDSC--854A, TA=25°C, tp=10us, RG=4.7ohm. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET – SiC Power, Single N-Channel. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 19V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 75A, 104A, 104A, 2.9m Ohms, SO, SO-8FL, 30 v. ID (T=100°C): 75A. ID (T=25°C): 104A. Idss (max): 104A. On-resistance Rds On: 2.9m Ohms. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 208A/10ms. Id(imp): 208A. Note: screen printing/SMD code 4835N. Marking on the case: 4835N. Number of terminals: 8. Pd (Power Dissipation, Max): 63W. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET

N-channel transistor, 50A, 50uA, 50A, 5.1M Ohms, TO-263 (D2PAK). ID (T=25°C): 50A. Idss: 50uA. Idss (max): 50A. On-resistance Rds On: 5.1M Ohms. Housing (according to data sheet): TO-263 (D2PAK). C(in): 2780pF. Cost): 641pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 59.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 8 ns. Technology: Field Effect Transistor