N-channel FETs and MOSFETs

N-channel transistor, 30 milliOhms, SO, PG-DSO20. On-resistance Rds On: 30 milliOhms. Housing: SO. Housing (according to data sheet): PG-DSO20. Function: 'Smart High-Side Power Switch'. Output: 2db N-MOS 43V 5.5A. Number of terminals: 20. Assembly/installation: surface-mounted component (SMD). VCC: 5...34V

N-channel transistor, 7.5A, 13.5A, 13.5A, 0.12 Ohms, 50V. ID (T=100°C): 7.5A. ID (T=25°C): 13.5A. Idss (max): 13.5A. On-resistance Rds On: 0.12 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: Logic-Level. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 20uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 750pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Power MOSFET SMPS. G-S Protection: no. Id(imp): 16A. IDss (min): 2uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 10 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2.1V

N-channel transistor, 61A, 75A, 1uA, 0.009 Ohms, D2PAK ( TO-263 ), SOT-404, 55V. ID (T=100°C): 61A. ID (T=25°C): 75A. Idss (max): 1uA. On-resistance Rds On: 0.009 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Voltage Vds(max): 55V. C(in): 2230pF. Cost): 510pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 62 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 347A. IDss (min): 0.05uA. Number of terminals: 3. Pd (Power Dissipation, Max): 166W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 84 ns. Td(on): 18 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 38A, 54A, 10uA, 17m Ohms, D2PAK ( TO-263 ), SOT-404, 55V. ID (T=100°C): 38A. ID (T=25°C): 54A. Idss (max): 10uA. On-resistance Rds On: 17m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Voltage Vds(max): 55V. C(in): 1200pF. Cost): 290pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 217A. IDss (min): 0.05uA. Number of terminals: 3. Pd (Power Dissipation, Max): 118W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 70 ns. Td(on): 15 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 14A, 20A, 500uA, 0.064 Ohms, TO-220, SOT-78 ( TO220AB ), 55V. ID (T=100°C): 14A. ID (T=25°C): 20A. Idss (max): 500uA. On-resistance Rds On: 0.064 Ohms. Housing: TO-220. Housing (according to data sheet): SOT-78 ( TO220AB ). Voltage Vds(max): 55V. C(in): 440pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: Automotive, power switching, 12V and 24V Motor. G-S Protection: no. Id(imp): 81A. IDss (min): 0.05uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Spec info: IDM--81A (Tmb 25°C; pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 10 ns. Technology: TrenchMOS logic level POWER MOSFET. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 37A, 52A, 52A, 0.018 Ohms, D2PAK ( TO-263 ), P-TO263-3-2, 55V. ID (T=100°C): 37A. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.018 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): P-TO263-3-2. Voltage Vds(max): 55V. C(in): 1220pF. Cost): 410pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 12 ns. Technology: SIPMOS, PowerMosfet. Operating temperature: -55...+175°C

N-channel transistor, 19A, 30A, 100uA, 0.03 Ohms, TO-220, TO-220AC, 50V. ID (T=100°C): 19A. ID (T=25°C): 30A. Idss (max): 100uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC. Voltage Vds(max): 50V. C(in): 1500pF. Cost): 750pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 30 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 32A, 42A, 42A, 0.028 Ohms, 50V. ID (T=100°C): 32A. ID (T=25°C): 42A. Idss (max): 42A. On-resistance Rds On: 0.028 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 125W. Technology: V-MOS

N-channel transistor, 22A, 39A, 39A, 40m Ohms, 50V. ID (T=100°C): 22A. ID (T=25°C): 39A. Idss (max): 39A. On-resistance Rds On: 40m Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: 250/500ns. Pd (Power Dissipation, Max): 125W. Technology: V-MOS S/L

N-channel transistor, PCB soldering, TO-220AB, 100V, 34A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 34A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ22. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 34A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 300 ns. Ciss Gate Capacitance [pF]: 1850pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.6A, 2.6A, 1000V. ID (T=25°C): 2.6A. Idss (max): 2.6A. Voltage Vds(max): 1000V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 78W. Technology: V-MOS L

N-channel transistor, 7A, 13A, 13A, 0.12 Ohms, 60V. ID (T=100°C): 7A. ID (T=25°C): 13A. Idss (max): 13A. On-resistance Rds On: 0.12 Ohms. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 330pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 44A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 10 ns. Technology: Enhancement Mode Power MOSFET Transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 200V, 7A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ73LH. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 500V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 3A. On-resistance Rds On: 1.8 Ohms. Voltage Vds(max): 400V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: <57/115ns. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, PCB soldering, TO-220AB, 400V, 2.7A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2.7A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ76A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.7A, 2.7A, 2.7A, 4 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 1.7A. ID (T=25°C): 2.7A. Idss (max): 2.7A. On-resistance Rds On: 4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: <50/105ns. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 1.7A, 2.9A, 100uA, 3 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 1.7A. ID (T=25°C): 2.9A. Idss (max): 100uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 460pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: BSIPMOS® Power Transistor, Enhancement mode. Id(imp): 11.5A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 75W. Td(off): 50 ns. Td(on): 8 ns. Technology: V-MOS. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 1.5A, 2.1A, 2.1A, 3 Ohms, 800V. ID (T=100°C): 1.5A. ID (T=25°C): 2.1A. Idss (max): 2.1A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: <100/220ns. Pd (Power Dissipation, Max): 40W. Technology: V-MOS (F)

N-channel transistor, 3.2A, 3.2A, 800V. ID (T=25°C): 3.2A. Idss (max): 3.2A. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: V-MOS. Pd (Power Dissipation, Max): 78W

N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 4.5A. On-resistance Rds On: 1.6 Ohms. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Technology: V-MOS

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 35W. Technology: TO-220F