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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.09$ 9.83$
2 - 2 8.63$ 9.33$
3 - 4 8.36$ 9.04$
5 - 9 8.18$ 8.84$
10 - 19 8.00$ 8.65$
20 - 29 7.72$ 8.35$
30 - 74 7.45$ 8.05$
Quantity U.P
1 - 1 9.09$ 9.83$
2 - 2 8.63$ 9.33$
3 - 4 8.36$ 9.04$
5 - 9 8.18$ 8.84$
10 - 19 8.00$ 8.65$
20 - 29 7.72$ 8.35$
30 - 74 7.45$ 8.05$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 74
Set of 1

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G. NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 4.5pF. Cost): 10pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) NJW0281. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 16/06/2025, 03:25.

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. Cost): 1.7pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL3281A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. Cost): 1.7pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL3281A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
12.81$ VAT incl.
(11.85$ excl. VAT)
12.81$
Quantity in stock : 34
NJW1302

NJW1302

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( ...
NJW1302
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW3281. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
NJW1302
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW3281. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
11.83$ VAT incl.
(10.94$ excl. VAT)
11.83$
Quantity in stock : 24
2SC5359

2SC5359

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
2SC5359
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Spec info: complementary transistor (pair) 2SA1987. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
2SC5359
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Spec info: complementary transistor (pair) 2SA1987. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
14.40$ VAT incl.
(13.32$ excl. VAT)
14.40$
Quantity in stock : 13
MJL3281A

MJL3281A

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL1302A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL1302A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
17.70$ VAT incl.
(16.37$ excl. VAT)
17.70$
Quantity in stock : 30
NJW3281

NJW3281

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( ...
NJW3281
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW1302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
NJW3281
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW1302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
11.83$ VAT incl.
(10.94$ excl. VAT)
11.83$

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