PNP bipolar transistors

NPN-Transistor, PCB soldering, TO-92, 90V, 50mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, 1A, 20V. Collector current: 1A. Collector/emitter voltage Vceo: 20V. Resistor B: no. BE diode: PNP bipolar transistor. BE resistor: PCB soldering. C(in): TO-126. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 4W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-92, 90V, 50mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.05A, TO-92, TO-92L, 160V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, D18/C, 40V/32V, 1A. Housing: PCB soldering. Housing: D18/C. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.75W

NPN-Transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SC2073. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 150V. Vebo: 5V

NPN-Transistor, 0.05A, TO-92, TO-92, 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: audio/video. Pd (Power Dissipation, Max): 0.8W. Spec info: 9mm height. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: PCT Process. Max hFE gain: 240. Minimum hFE gain: 80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SC2235-Y. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2240. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 0.1A, TO-92, 2-5F1B, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): 2-5F1B. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2240. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 0.5A, TO-92, TO-92, 60V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 1.5A, TO-220, TO-220, 120V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SC2275. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, 60V/50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor, 0.2A, TO-92, TO-92, 50V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, 40V/32V, 2A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, PCB soldering, TO-126, 120V, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 8W

NPN-Transistor, PCB soldering, M10/J, 100V, 4A. Housing: PCB soldering. Housing: M10/J. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 40W

NPN-Transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Current Switching, low-saturation voltage. Max hFE gain: 280. Minimum hFE gain: 140. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) 2SD1623S. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Max hFE gain: 400. Minimum hFE gain: 200. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) 2SD1623T. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 1A, SOT-89, SOT-89 (SC-62), 32V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89 (SC-62). Collector/emitter voltage Vceo: 32V. BE diode: no. Cost): 20pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Marking on the case: BA. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: SMD BA0. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 4A, TO-126F, TO-126ML, 50V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 39pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: NF/SL. Ic(pulse): 6A. Pd (Power Dissipation, Max): 10W. Spec info: complementary transistor (pair) 2SD1683. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 6V

NPN-Transistor, 3A, TO-220FP, SC-67, 50V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): SC-67. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 95pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current switching, low-sat. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SD1804. Assembly/installation: PCB through-hole mounting. Tf (type): 20 ns. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V

NPN-Transistor, 5A, 25V. Collector current: 5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current switching. Note: hFE 140...280. Pd (Power Dissipation, Max): 10W. Spec info: TO-251 (I-Pak). Type of transistor: PNP