PNP bipolar transistors

NPN-Transistor, TO92, -300V. Housing: TO92. Collector-Emitter Voltage VCEO: -300V. Type: transistor for low power applications. Polarity: PNP. Power: 0.625W. Collector-Base Voltage VCBO: -300V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 70MHz. DC Collector/Base Gain hFE min.: 25. Series: MPSA

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) NJW0302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 60V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2907A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1.5A, TO-92, TO-92, 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 8A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP137. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-247, -100V, 100V, 10A. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): -100V. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP147. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 2A, TO-92, TO-92, 100V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 100V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Very low saturation VBE(sat) 0.9V. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) ZTX653. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 600 ns. Tf(min): 40 ns. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.17V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.9V. Max hFE gain: 800. Minimum hFE gain: 150. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Spec info: complementary transistor (pair) ZTX690. Assembly/installation: PCB through-hole mounting. Tf(max): 600 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 70V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.95V. Max hFE gain: 800. Minimum hFE gain: 300. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 750 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.45V. Vebo: 5V