PNP bipolar transistors

NPN-Transistor, 25mA, TO-92, TO-92, 40V. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, 0.03A, TO-126 (TO-225, SOT-32), TO-126, 300V. Collector current: 0.03A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 2W. Spec info: complementary transistor (pair) BF471. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: VHF/UHF-V. Type of transistor: PNP

NPN-Transistor, 30mA, TO-92, TO-92, 40V. Collector current: 30mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Function: VHF-V. Minimum hFE gain: 25. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 35V. Vebo: 4 v

NPN-Transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. Quantity per case: 1. Assembly/installation: PCB through-hole mounting

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 250V, 50mA. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DB. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.03A, SOT-39, SOT-39, 40V. Collector current: 0.03A. Housing: SOT-39. Housing (according to data sheet): SOT-39. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100mA. Marking on the case: 1W. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.8V

NPN-Transistor. Quantity per case: 1. Function: UHF-V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 12V, 35mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 12V. Collector current Ic [A], max.: 35mA. RoHS: yes. Component family: high frequency PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: X1p. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23 ( 2.9x1.6mm ), 50V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( 2.9x1.6mm ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital Transistor (Bias Resistor Built-in). Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: screen printing/SMD code 14. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, PCB soldering (SMD), SOT-223, 30 v, 5.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 5.5A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT949. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: Samsung>> STB1277. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V

NPN-Transistor, 1A, 30 v. Collector current: 1A. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Pd (Power Dissipation, Max): 0.8W. Spec info: SAMSUNG. Type of transistor: PNP

NPN-Transistor, 0.6A, TO-92, TO-92, 60V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 75. Note: pinout E, C, B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Spec info: 0504-000142. Type of transistor: PNP

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE diode: no. BE resistor: 10. Cost): 3.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN-Transistor, 1.5A, 150V. Collector current: 1.5A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

ROHS: Yes. Housing: TO3. Power: 200W. Assembly/installation: THT. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 120V. Collector current Ic [A]: 30A

NPN-Transistor, 30A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 4 MHz. Function: hFE 1000 (IC=20Adc, VCE=5Vdc). Minimum hFE gain: 1000. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJ11016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, 20A, TO-3 ( TO-204 ), TO-3, 140V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. BE diode: no. BE resistor: 70. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Production date: 2015/08. Max hFE gain: 150. Minimum hFE gain: 25. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15003. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 360pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 15A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15016G. Cutoff frequency ft [MHz]: 18 MHz. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C