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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V - TK7P60W

N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V - TK7P60W
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Quantity excl. VAT VAT incl.
1 - 4 4.59$ 4.96$
5 - 9 4.36$ 4.71$
10 - 24 4.13$ 4.46$
25 - 49 3.90$ 4.22$
50 - 99 3.81$ 4.12$
100 - 249 3.72$ 4.02$
250 - 1884 3.58$ 3.87$
Quantity U.P
1 - 4 4.59$ 4.96$
5 - 9 4.36$ 4.71$
10 - 24 4.13$ 4.46$
25 - 49 3.90$ 4.22$
50 - 99 3.81$ 4.12$
100 - 249 3.72$ 4.02$
250 - 1884 3.58$ 3.87$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1884
Set of 1

N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V - TK7P60W. N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=25°C): 7A. Idss (max): 10uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. Id(imp): 28A. Marking on the case: TK7P60W. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 09:25.

Equivalent products :

Quantity in stock : 50
STD10NM60N

STD10NM60N

N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK...
STD10NM60N
N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STD10NM60N
N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.42$ VAT incl.
(3.16$ excl. VAT)
3.42$

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