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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V - IRF1010E

Quantity	excl. VAT	VAT incl.
1 - 4	2.78$	3.01$
5 - 9	2.65$	2.86$
10 - 24	2.51$	2.71$
25 - 49	2.37$	2.56$
50 - 95	2.31$	2.50$

Quantity	U.P
1 - 4	2.78$	3.01$
5 - 9	2.65$	2.86$
10 - 24	2.51$	2.71$
25 - 49	2.37$	2.56$
50 - 95	2.31$	2.50$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 95

Set of 1

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V - IRF1010E. N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 88

IRF1010N

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 60A. ID (T=2...

Set of 1

2.83$ VAT incl.
(2.62$ excl. VAT)

2.83$

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IRF3710S

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IRF1010E

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=2...

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[LOT]

3.01$ VAT incl.
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3.01$