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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - STD10PF06

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - STD10PF06
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.77$ 2.99$
5 - 9 2.63$ 2.84$
10 - 24 2.55$ 2.76$
25 - 49 2.49$ 2.69$
50 - 99 2.44$ 2.64$
100 - 249 2.36$ 2.55$
250+ 2.27$ 2.45$
Quantity U.P
1 - 4 2.77$ 2.99$
5 - 9 2.63$ 2.84$
10 - 24 2.55$ 2.76$
25 - 49 2.49$ 2.69$
50 - 99 2.44$ 2.64$
100 - 249 2.36$ 2.55$
250+ 2.27$ 2.45$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - STD10PF06. P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 850pF. Cost): 230pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 40A. ID (T=100°C): 7A. IDss (min): 1uA. Number of terminals: 2. Temperature: +175°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 15/06/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 535
STD10P6F6

STD10P6F6

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 10...
STD10P6F6
P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 340pF. Cost): 40pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 40A. ID (T=100°C): 7.2A. IDss (min): 1uA. Marking on the case: 10P6F6. Number of terminals: 2. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STD10P6F6
P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 340pF. Cost): 40pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 40A. ID (T=100°C): 7.2A. IDss (min): 1uA. Marking on the case: 10P6F6. Number of terminals: 2. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.71$ VAT incl.
(1.58$ excl. VAT)
1.71$
Quantity in stock : 193
NTD2955T4

NTD2955T4

P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (...
NTD2955T4
P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Function: ID pulse 36A/10ms. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
NTD2955T4
P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Function: ID pulse 36A/10ms. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.68$ VAT incl.
(1.55$ excl. VAT)
1.68$
Quantity in stock : 116
FDD5614P

FDD5614P

P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=...
FDD5614P
P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 45A. ID (T=100°C): 15A. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
FDD5614P
P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 45A. ID (T=100°C): 15A. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
Set of 1
3.70$ VAT incl.
(3.42$ excl. VAT)
3.70$

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MOR2WS-270R

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SMDF-3-15A2410T

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Max Continuous current: 3.15A. Type: UL248-14. Fuse type: surface mount (SMD) fuse. Fuse propertie...
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AP4525GEH

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RSF2WS-0R12

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Note: +/-44V max (6 Ohms). Note: 20Hz...20KHz. Assembly/installation: PCB through-hole mounting. Hou...
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